Potential sputtering and kinetic sputtering from a water adsorbed Si(100) surface with slow highly charged ions

We measured charge state dependence and incident angle dependence of sputtering yields and two-dimensional (213) position distributions for H+, Si+ and SiOH+ ions emitted from a water adsorbed Si(1 0 0) surface irradiated by a few keV Arq+ (q = 4-8). It was found that (1) H+ yield strongly depended on the charge state and increased with increasing incident angle, (2) Si+ and SiOH+ yields were independent of the charge state and increased with increasing incident angle. (c) 2005 Elsevier B.V. All rights reserved.