Journal
JOURNAL OF APPLIED ELECTROCHEMISTRY
Volume 35, Issue 5, Pages 479-485Publisher
SPRINGER
DOI: 10.1007/s10800-005-0290-2
Keywords
CdTe; electrodeposition; magnetoresistance; nanowire; NiFe; semiconductor
Categories
Ask authors/readers for more resources
Cylindrical nano-pores of an anodized aluminum oxide layer on the surface of bulk aluminum were used as templates for the electrochemical growth of semiconductor and magnetic nanowires. The electrodeposition of CdTe and NiFe was investigated to determine the optimum conditions for each nanowire growth over a wide range of cathode potentials. The desired composition of Cd50Te50 and Ni80Fe20 was achieved by controlling the cathode potential during electrodeposition. Temperature dependences of resistance for CdTe nanowires confirmed the semiconductor character with amorphous behavior at low temperature, while those of NiFe nanowires showed metallic character. The anisotropic magnetoresistance (AMR) of NiFe nanowires reached 1.9% at 300 K.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available