Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor

In2Se3 thin films are spin-coated using a hydrazinium-precursor approach to yield thin-film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin-coating SnS2-xSex films, has also been replaced with a more convenient solvent mixture of ethanolamine and dimethyl sulfoxide. Low-voltage operation (< 8 V) of TFTs based on spin-coated ln(2)Se(3) yields mobilities as high as 16 cm(2) V-1 s(-1) and on/off ratios of 10(6).