4.6 Article Proceedings Paper

Mn-doped V2VI3 semiconductors:: Single crystal growth and magnetic properties -: art. no. 10D324

Journal

JOURNAL OF APPLIED PHYSICS
Volume 97, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1854451

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We have grown Mn-doped V2VI3 single crystals using the temperature gradient solidification method. We report on the structural and magnetic properties of Mn-doped Bi2Te3, Sb2Te3, Bi2Se3, and Sb2Se3 compound semiconductors. The lattice constants of several percent Mn-doped V2VI3 were slightly smaller than those of the undoped V2VI3 due to the smaller Mn atomic radius (1.40 angstrom) than those of Bi (1.60 angstrom) and Sb (1.45 angstrom). Mn-doped Bi2Te3 and Sb2Te3 had ferromagnetic ordering at T-C = 10 and 17 K, respectively. However, Mn-doped Bi2Se3 and Sb2Se3 showed spin glass and paramagnetic properties, respectively. (c) 2005 American Institute of Physics.

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