Programmable spintronics logic device based on a magnetic tunnel junction element

A programmable spintronics logic device was designed and fabricated based on a single pinned magnetic tunnel junction (MTJ) element. In this work, a current input line C passing through the MTJ element itself was introduced. Two separated input current lines (A and B) could switch the magnetization of the pinned layer under the heat assistance from line C. Full logic functions (AND, OR, NAND, NOR, XOR, and XNOR) can be realized based on a normal pinned and a synthetic pinned MTJ element. A Wheatstone bridge was engineered to read this single MTJ element logic device. MTJ elements with 1 mu m(2) and normal pinned structure: (Ta 30 angstrom/NiFe 40 angstrom/MnIr 35 angstrom/CoFe 30 angstrom/(Al 7 angstrom)+ oxidation /CoFe 30 angstrom/NiFe 40 angstrom/Ta 200 angstrom), have low resistance of 6.3 Omega and high resistance of 7.2 Omega, which gives the magnetoresis (MR) ratio of 14%. Approximately a 3-mV output difference is obtained between logical 1 and 0. (c) 2005 American Institute of Physics.