Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si(001) -: art. no. 201901

We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 degrees C for 20 s, in flowing N-2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 degrees C for 20 s in flowing N-2. (c) 2005 American Institute of Physics.