Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1938004
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We have fabricated and characterized ultrafast metal-semiconductor- metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. © 2005 American Institute of Physics.
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