Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1943493
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We have grown strain-relaxed SiGe layers on Si(001) substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed. (c) 2005 American Institute of Physics.
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