Journal
MICROELECTRONIC ENGINEERING
Volume 80, Issue -, Pages 1-6Publisher
ELSEVIER
DOI: 10.1016/j.mee.2005.04.035
Keywords
nanotechnology; non-silicon; high-kappa dielectric; metal gate; high-mobility
Ask authors/readers for more resources
High-kappa gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-kappa gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high I-ON/I-OFF ratios.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available