Journal
REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 76, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1906183
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Most conventional chemical vapor deposition (CVD) systems do not have the spatial actuation and sensing capabilities necessary to control deposition uniformity or to intentionally induce nonuniform deposition patterns for single-wafer combinatorial CVD experiments. In an effort to address these limitations, a novel CVD reactor system has been developed that can explicitly control the spatial profile of gas-phase chemical composition across the wafer surface. This paper discusses the construction of a prototype reactor system featuring a three-zone, segmented showerhead design. Experiments are performed to assess the ability of this reactor system to deposit tungsten films by the hydrogen reduction process; segment-to-segment process recipes are controlled to deposit spatially nonuniform W films. The capabilities of this reactor system for materials discovery research are discussed. (c) 2005 American Institute of Physics.
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