Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 144, Issue -, Pages 1027-1030Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.elspec.2005.01.211
Keywords
photoemission spectroscopy; laser molecular-beam epitaxy
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We have constructed a high-resolution synchrotron-radiation photoemission spectrometer combined with a laser molecular-beam epitaxy (laser MBE) thin film growth system in order to investigate the electronic structure of oxide and nitride thin films. The system was installed at the newly built soft X-ray undulator beamline BL17SU of SPring-8. Total energy resolution of 102 meV was achieved at photon energy of 870 eV. The photoemission apparatus is connected to a laser MBE chamber through a preparation chamber. Single crystal thin-film samples fabricated by laser MBE can be transferred quickly into the photoemission chamber without breaking ultrahigh vacuum. Various new studies are possible using this system and third-generation soft X-ray synchrotron light source, such as direct observation of the bulk electronic band structure of single-crystal films with no cleavable plane, the interface electronic structure of oxide or nitride heterostructures, etc. (c) 2005 Elsevier B.V. All rights reserved.
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