3.8 Article

An in-situ fabrication and characterization system developed for high performance organic semiconductor devices

Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.3757

Keywords

field effect transistor; organic semiconductor; C-60; in-situ; n-type; mobility; top contact

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We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C-60 field effect transistors (FETs) were fabricated and their performance was characterized. The top contact FET exhibited a mobility as high as 1.4cm(2)/(V.s), which was higher than the bottom contact FET.

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