Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 44, Issue 6A, Pages 3757-3759Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.3757
Keywords
field effect transistor; organic semiconductor; C-60; in-situ; n-type; mobility; top contact
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We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C-60 field effect transistors (FETs) were fabricated and their performance was characterized. The top contact FET exhibited a mobility as high as 1.4cm(2)/(V.s), which was higher than the bottom contact FET.
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