An array of Eiffel-tower-shape AIN nanotips and its field emission properties

An array of Eiffel-tower-shape AlN nanotips has been synthesized and assembled vertically with Si substrate by a chemical vapor deposition method at 700 degrees C. The single-crystalline AlN nanotips along [001] direction, including sharp tips with 10-100 nm in diameter and submicron-sized bases, are distributed uniformly with density of 10(6)-10(7) tips/cm(2). Field emission (FE) measurements show that its turn on field is 4.7 V/mu m, which is comparable to that of carbon nanotubes, and the fluctuation of FE current is as small as 0.74% for 4 h. It is revealed this nanostructure is available to optimize the FE properties and make the array a promising field emitter. (c) 2005 American Institute of Physics.