Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique -: art. no. 241111

We report the low-temperature (similar to 150 degrees C) fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of similar to 3.8 V and low reverse leakage current of < 10(-2) mu A, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of similar to 385 nm and full width at half maximum of similar to 20 nm are observed at a forward biased voltage of similar to 7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film. (c) 2005 American Institute of Physics.