Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions -: art. no. 241915

Ultrafast photoelectric effects have been observed in La0.7Sr0.3MnO3/Si p-n junctions fabricated by laser molecular-beam epitaxy. The rise time was similar to 210 ps and the full width at half-maximum was similar to 650 ps for the photovoltaic pulse when the junction was irradiated by a 1064 nm laser pulse of 25 ps duration. The photovoltaic sensitivity was as large as 435 mV/mJ for a 1064 nm laser pulse. No such photovoltaic signal was observed with irradiation from a 10.6 mu m CO2 laser pulse. The results reveal that this phenomenon is an ultrafast photoelectric effect. (c) 2005 American Institute of Physics.