4.8 Article

CdSe-Sensitized p-CuSCN/nanowire n-ZnO heterojunctions

Journal

ADVANCED MATERIALS
Volume 17, Issue 12, Pages 1512-1515

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200401848

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A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array (see Figure). Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency.

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