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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 127, Issue 24, Pages 8614-8617Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja042554y
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We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.
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