Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1952569
Keywords
-
Categories
Ask authors/readers for more resources
We use evaporated C-60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics. (c) American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available