Journal
NANO LETTERS
Volume 5, Issue 7, Pages 1487-1490Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl050850i
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We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
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