Journal
SOLID-STATE ELECTRONICS
Volume 49, Issue 7, Pages 1158-1162Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2005.04.015
Keywords
ZnO; p-n homojunction; temperature; tunneling; ideality factor
Ask authors/readers for more resources
ZnO p-n homojunctions have been fabricated by depositing p-type ZnO thin films using an innovative CVD method on n-type ZnO films produced by conventional D.C sputtering on glass substrates. The individual oxides have been characterized for ohmic contact by current-voltage (I-V) measurements and the semiconducting electrical parameters have been determined by resistivity and Hall effect measurements at room temperature. The formation of ZnO p-n homojunctions has been studied by I-V characteristics at 30, 300 and 400 degrees C. Rectifying nature was observed in the measured I-V curves. The ideality factor, saturation current and the barrier height for the forward bias have been calculated as a function of temperature. The improvement of the junction properties was observed from the decrease in the value of the ideality factor with the increase in temperature. A qualitative energy band diagram of the homejunction has been constructed in order to explain the interband carrier tunneling mechanism. (c) 2005 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available