Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 17, Issue 7, Pages 1510-1512Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.848546
Keywords
germanium (Ge); optical interconnections; optical receivers; photodetectors
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Vertical-incidence Germanium photodiodes grown on thin strain-relaxed buffers on Silicon substrates are reported. For a mesa-type detector with a diameter of 10 mu m, a resistance-capacitance-limited 3-dB bandwidth of 25.1 GHz at an incident wavelength of 1552 nm and zero external bias has been measured. At a reverse bias of 2 V, the bandwidth is 38.9 GHz. The detector comprises a 300-nm-thick intrinsic region, and thus, has the potential for easy integration with Si circuitry and exhibits zero bias external quantum efficiencies of 23%, 16%, and 2.8% at 850, 1298, and 1552 nm, respectively.
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