Journal
PHYSICAL REVIEW B
Volume 72, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.72.035333
Keywords
-
Ask authors/readers for more resources
Tensile deformation behavior of silicon (Si) wires with nanometer widths, synthesized by nanometer-tip contact and successive retraction, was studied by atomistic combined microscopy of high-resolution transmission electron microscopy/scanning probe microscopy. The elastic limit, Young's modulus, and strength of individual Si nanowires were investigated based on the mechanics of materials at an atomic scale. It was found that both Young's modulus and strength increased to 18 +/- 2 and 5.0 +/- 0.3 GPa, respectively. The elastic limit was 0.10 +/- 0.02 and fracture strain was estimated to be 0.30 +/- 0.01. Experimental results show that mechanical properties of Si wires transform due to size reduction from micrometer to nanometer scale.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available