Laser-assisted atomic layer deposition of boron nitride thin films

Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250-750 degrees C. Both the NH3 and BBr3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600 degrees C, the growth rate was 100% higher for the LALD process than for ALD. The films consisted of hydrogen-terminated turbostratic BN grains. H-2 was theoretically found to bind as strongly as BBrX and NHX (X=0-2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.