Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 52, Issue 7, Pages 1589-1595Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2005.850945
Keywords
bandstructure; effective-mass; field-effect transistor (FET); nanowire; nonparabolicity; quantum confinement; tight binding
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This paper examines the validity of the widely used parabolic effective-mass approximation for computing the current-voltage (I-V) characteristics of silicon nanowire transistors (SNWTs). The energy dispersion relations for unrelaxed Si nanowires are first computed by using an Sp(3)d(5)s* tight-binding (TB) model. A seminumerical ballistic field-effect transistor model is then adopted to evaluate the I-V characteristics of the (n-type) SNWTs based on both a TB dispersion relation and parabolic energy bands. In comparison with the TB approach, the parabolic effective-mass model with bulk effective-masses significantly overestimates SNWT threshold voltages when the wire width is < 3 nm, and ON-currents when the wire width is < 5 nm. By introducing two analytical equations with two tuning parameters, however, the effective-mass approximation can well reproduce the TB I-V results even at a similar to 1.36-nm wire width.
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