Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1992658
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- Engineering and Physical Sciences Research Council [GR/S99075/01, GR/S99082/01] Funding Source: researchfish
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We report that adding a thin (similar to 10 nm) semiconducting polymer interlayer between apoly(styrenesulphonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT:PSS) hole transporter and an emissive semiconductor significantly improves the device efficiency of polymer light-emitting diodes (LEDs). With the interlayer, the external quantum efficiency (EQE) increases from 0.7%(0.4 cd/A at 3.7 V) to 1.9% (1.0 cd/A at 3.3 V) at 100 cd/m(2) for red LEDs and from 1.9%(6.2 cd/A at 3.4 V) to 3.0% (10.1 cd/A at 3.0 V) at 1000 cd/m(2) for green LEDs. An EQE of 4.0% is also observed in blue LEDs (35% increase). The interlayer is spin-coated directly on top of the PEDT:PSS layer from a poly(2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-sec-butylphenyl)imino)-1,4-phenylene)) (TFB) solution. This interlayer prevents significant quenching of radiative excitons at the PEDT:PSS interface by acting as an efficient exciton blocking layer. (c) 2005 American Institute of Physics.
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