Journal
PHYSICA B-CONDENSED MATTER
Volume 364, Issue 1-4, Pages 157-161Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2005.04.005
Keywords
MgxZn1-x thin films; magnetron sputtering; Mg content
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MgxZn1-xO films (0 <= x <= 0.30) have been prepared on sapphire substrates by radio frequency magnetron sputtering at 80 degrees C. Structure, morphology and optical properties of the MgxZn1-xO films were studied using X-ray diffraction meter, atomic force microscopy and transmittance spectra, respectively. The thin films had hexagonal wurtzite single-phase structure of ZnO and a preferred orientation with the c-axis perpendicular to the substrates. By increasing Mg content in the films up to x = 0.30, the c-axis lattice constant of the MgxZn1-xO film decreased 1.9%. Transmittances of MgxZn1-xO were nearly equivalent to those of ZnO. The optical band gaps of MgxZn1-xO films were determined by the transmittance spectra, which increased from 3.24 eV at x = 0 to 3.90 eV at x = 0.30. (c) 2005 Elsevier B.V. All rights reserved.
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