Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 397, Issue 1-2, Pages 85-94Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2004.12.045
Keywords
X-ray diffraction; semiconductors; phase diagram; crystal structure; phase transformation; quaternary compounds
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The isothermal section of the Cu2S-Zn(Cd)S-GeS2 systems at 670 K was constructed using X-ray diffraction analysis. At this temperature, two quaternary intermediate phases, Cu2CdGeS4 and similar to Cu8CdGeS7, exist in the Cu2S-CdS-GeS2 system, and only one phase, Cu2ZnGeS4, exists in the Cu2S-ZnS-GeS2 system. The phase diagram of the Cu2GeS3-ZnS system was constructed using differential-thermal analysis and X-ray diffraction, and the existence Of Cu2ZnGeS4 has been confirmed. It forms incongruently at 1359 K. Powder X-ray diffraction was used to refine the crystal structure Of Cu2ZnGeS4, which crystallizes in the tetragonal stannite-type structure at 670 K (space group I42m, a = 0.534127(9) nm, c = 1.05090(2) nm, R-1 = 0.0477). The possibility of the formation of quaternary compounds in the quasi-ternary systems A(2)(I)X-(BX)-X-II-(CX2)-X-IV, where A(I)-Cu, Ag; B-II-Zn, Cd, Hg; C-IV-Si, Ge, Sn and X-S, Se, Te is discussed. (c) 2005 Elsevier B.V. All rights reserved.
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