Journal
APPLIED SURFACE SCIENCE
Volume 248, Issue 1-4, Pages 62-65Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.03.033
Keywords
MOSFET; hot carrier luminescence; photon emission; substrate current; semiconductor device models
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Measurements of photon emission and substrate current in metal-oxide-semiconductor field effect transistors at various temperatures have been carried out using electrical and NIR microscopy. The results received at room temperature have extended the correlation between the substrate current and the photon emission, which was previously found in the visible, to the NIR range. On the basis of this correlation, an empirical model based on the substrate current was used to describe the static emission intensity dependence on the transistor bias. Temperature resolved measurements show that the correlation between emission intensity and the substrate current appears to be coincidental. (c) 2005 Elsevier B.V. All rights reserved.
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