Journal
PHYSICAL REVIEW B
Volume 72, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.72.073307
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A high degree of spin polarization (or spin memory) is achieved using quasiresonant optical excitation at zero magnetic field (B=0) for singly positively charged excitons (X+) in individual quantum dots embedded in a Schottky diode. The high degree of spin memory indicates highly efficient optical excitation (writing) of long-lived spin-polarized electrons, determining the X+ spin orientation. We demonstrate control of the degree of spin polarization by the applied bias, controlling carrier tunneling rates in the device. In addition, efficient spin-selective optical excitation of neutral excitons is achieved for B > 1 T.
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