Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 17, Issue 8, Pages 1719-1721Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.851903
Keywords
avalanche photodiodes (APDs); impact ionization; photodetectors
Ask authors/readers for more resources
A separate absorption, charge, and multiplication ln(0.53)Ga(0.47)As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandNvidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
