Journal
PHYSICAL REVIEW B
Volume 72, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.72.075210
Keywords
-
Ask authors/readers for more resources
We propose a DX center, beta-cation-cation-bonded (CCB)-DX, in III-V semiconductors based on first-principles calculations. Detailed structural and energetic analyses show that the relative stability of the beta-CCB-DX center with respect to two other previously proposed ones strongly depends on the size of the dopant atom. We find that the beta-CCB-DX center is most stable when a small group-VI atom replaces the host anion in III-V semiconductors. With the discovery of this DX center, several DX-related phenomena can be explained consistently.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available