Journal
PHYSICAL REVIEW B
Volume 72, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.72.081309
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Using a high-resolution low-temperature spectroscopic scanning near-field optical microscope we observe highly localized high-energy emissions from highly efficient GaxIn1-xN/GaN quantum wells. These sharp emissions about 300-400 meV above the main quantum well luminescence are characteristic for high-efficiency structures and originate from the immediate vicinity of threading dislocations. Thus, areas of increased bandgap surrounding the defects appear to exist only in high-efficiency structures, which act as barriers prohibiting carriers from recombining nonradiatively at the defects.
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