Photoconductivity and infrared absorption study of hydrogen-related shallow donors in ZnO -: art. no. 085212

Vapor phase grown ZnO samples treated with hydrogen and/or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and 310 cm(-1) were observed in the photoconductivity spectra of hydrogenated ZnO. These are identified as electronic transitions of three independent hydrogen-related shallow donors. Two electronic transitions from the H-I defect previously associated with the bond-centered hydrogen [E. V. Lavrov , Phys. Rev. B 66, 165205 (2002)] were found in IR absorption spectra at 1430 and 1480 cm(-1). Based on the energies of these transitions H-I was ruled out as a candidate for the hydrogen-related shallow donor in ZnO.