4.4 Article

Influence of the substrate's surface morphology and chemical nature on the nucleation and growth of microcrystalline silicon

Journal

THIN SOLID FILMS
Volume 485, Issue 1-2, Pages 77-81

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.03.017

Keywords

nucleation (327); silicon (434); Raman scattering (403); transmission electron microscopy (496)

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Hydrogenated microcrystalline silicon (mu c-Si:H) layers about 500 nm thick were deposited in the same run on flat and rough substrates (rms=60 nm) of various chemical nature. This study reveals that the spatial distribution of the microcrystalline/amorphous phases within the layer depends on the substrate's topography. The influence of the chemical nature of the substrate is shown to be preponderant on the layers nucleation. In particular, this study shows that nucleation density is the highest on plasma enhanced chemical vapor deposited silicon dioxide, whereas it is independent of the substrate's surface topography. Finally, the interpretation of Micro-Raman experiments for the evaluation of the respective volume fractions of amorphous/microcrystalline phases in the layers is discussed in relation with their spatial distribution. (c) 2005 Elsevier B.V All rights reserved.

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