Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 237, Issue 1-2, Pages 12-17Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2005.04.107
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Ultra-shallow ion implanted Si wafers, both with and without Ge pre-amorphization, were annealed using xenon arc flash lamps. The duration of flash illumination was controlled between 1 ms and 20 ms. Changes in sheet resistance and dopant profiles after flash anneal were measured and investigated, along with crystal defect densities. Sheet resistance was measured using a four-point probe. Dopant depth profiling and defect characterization were done using secondary ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy (XTEM). Sheet resistance values of 250-350 Omega/sq. at a junction depth of 24 nm (at B concentration of 1.0 X 10(18) cm(-3)) were achieved. No significant dopant diffusion was observed after the Xe arc flash lamp annealing. (c) 2005 Elsevier B.V. All rights reserved.
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