Dielectric and infrared properties of TiO2 films containing anatase and rutile

Electrical and optical properties of low-temperature, plasma enhanced chemical vapour deposited films of TiO2 have been studied; the source gases were TiCl4 and O-2. The amorphous, as-deposited films had a dielectric constant similar to 33 consistent with their measured density of 3.2 +/- 0.2 g cm(-3). Films deposited using a -41 V substrate bias contained the anatase phase and some rutile as evidenced from infrared spectroscopy and x-ray scattering. Annealing of these films at 600 degrees C resulted in a significant increase in the rutile content of the film.