Journal
ELECTROCHIMICA ACTA
Volume 50, Issue 22, Pages 4371-4377Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2005.02.016
Keywords
bismuth; tellurium; electrodeposition; thermoelectric; microstructure
Categories
Ask authors/readers for more resources
Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered BixTey/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited BixTey thin films were measured before and after annealing and compared to those of bulk Bi2Te3. Annealing at 250 degrees C in reducing H-2 atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of -188.5 mu V/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films. (c) 2005 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available