Journal
JOURNAL OF APPLIED PHYSICS
Volume 98, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2010621
Keywords
-
Categories
Ask authors/readers for more resources
Using atomistic pseudopotential calculations we predict the evolution of the valence-band maximum energy E-upsilon(x,y) and conduction-band minimum energy E-c(x,y) for a compositionally graded quaternary Ga1-yInyAsxSb1-x alloy lattice matched to GaSb or InAs as a function of (x,y) or, equivalently, as a function of distance from the substrate. We find upward-concave bowing for both E-c and E-upsilon, in contradiction with simple interpolative models. A transition from staggered (type II) to broken-gap (type III) lineup relative to GaSb is predicted to occur at x=0.81 and y=0.92 on a GaSb substrate, and at x=0.59 and y=0.62 on an InAs substrate. In the latter case, the quaternary alloy has a minimum gap at x=0.85 and y=0.87. (c) 2005 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available