Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 399, Issue 1-2, Pages 149-154Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2005.03.086
Keywords
phase diagram; crystal structure; X-ray diffraction; semiconductors
Ask authors/readers for more resources
X-ray phase analysis was used to investigated nine alloys with the general formula (Cu2PbBX4)-X-IV where B-IV - Si, Ge, Sn; X - S, Se, Te. Only one compound of such composition was found, namely Cu2PbSiS4. Using differential thermal and X-ray phase analysis results, the phase diagrams of the Cu2S-SiS2 (in 0-60 mol% SiS2 range) and Cu2SiS3-PbS systems were constructed. A congruent type of formation of Cu8SiS6 and Cu2SiS3 at 1459 and 1201 K, respectively, was confirmed in the Cu2S-SiS2 system. The Cu2SiS3-PbS system is quasi-binary with the formation of two quaternary intermediate phases, similar to Cu4PbSi2S7 and Cu2PbSiS4. The similar to Cu4PbSi2S7 compound forms incongruently at 1024 K, and has a polymorphous transition at 933 K. Cu2PbSiS4 melts in peritectically at 963 K and is also dimorphous. The phase transition temperature increases with PbS content in the 883-915 K range. The crystal structure of the low-temperature (LT) Cu2PbSiS4 modification was determined using powder method. It has trigonal symmetry (space group P3(2)21, a = 0.60565(2), c = 1.51841(5) nm, R-1 = 0.0641). (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available