Journal
ADVANCED MATERIALS
Volume 17, Issue 16, Pages 1964-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200500317
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Ga-ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermo-chemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga-ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.
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