Journal
PHYSICAL REVIEW LETTERS
Volume 95, Issue 9, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.95.096802
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Using a low temperature growth method, we have prepared atomically flat Pb thin films over a wide range of film thickness on a Si-(111)-7x7 surface. The Pb film morphology and electronic structure are investigated in situ by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. Well-defined and atomic-layer-resolved quantum-well states of the Pb films are used to determine the band structure and the electron-phonon coupling constant (lambda) of the films. We found an oscillatory behavior of lambda with an oscillation periodicity of two atomic layers. Almost all essential features in the Pb/Si(111) system, such as the growth mode, the oscillatory film stability, and the 9 monolayer envelope beating pattern, can be explained by our results in terms of the electron confinement in Pb films.
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