Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2035889
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Carrier concentration dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on insulating (100)-oriented LaAlO3 single-crystalline substrates by a pulsed-laser deposition method. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT of Nb-doped SrTiO3 increases with Nb concentration and it reaches similar to 0.37 (20% Nb doped), which is the largest value among n-type oxide semiconductors ever reported.
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