Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2034107
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We report on terahertz (THz) surface impedance measurement of an epitaxial MgB2 thin film using time domain THz spectroscopy. We show that the surface resistance of the MgB2 film is much lower than that of YBa2Cu3O7-delta and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that MgB2 thin films have a great potential for THz electronic applications.
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