Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

In this letter, we demonstrate successful operation of 100-nm T-gates double-gate high electron mobility transistors with two separate gate controls (V-g1s not equal V-g2s). These devices are fabricated by means of adhesive bonding technique using benzocyclocbutene polymer. The additional gate enables the variation of the threshold voltage V-th in a wide range from -0.68 to -0.12V while keeping high cutoff frequency f(t) of about 170 GHz and high maximum oscillation frequency f(max) of about 200 GHz. These devices are considered as being very effective for millimeter-wave mixing applications and are promising devices for the fabrication of velocity modulation transistor (VMT) (Sakaki et al., 1982).