Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 52, Issue 9, Pages 2111-2115Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2005.854290
Keywords
annealing; deuterium; dielectric breakdown; hot-carriers; leakage currents; MOS capacitors; MOSFETs; noise; oxidation; Weibull distributions
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In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the post-metal anneal (PMA). The oxide bulk degradation was evaluated using charge-to-breakdown and stress-induced leakage current; and the oxide interface degradation using hot-carrier degradation and low-frequency noise. The obtained results show that the oxide bulk does not benefit from the presence of deuterium, regardless of the stage of deuterium introduction, or the gate oxide thickness. The oxide interface is more stable only when deuterium is introduced in the PMA.
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