Si nanowire bridges in microtrenches: Integration of growth into device fabrication

Silicon nanowire bridges are grown in prefabricated microtrenches on (110) silicon-on-insulator wafers (see Figure). Silicon trenches are used as substrates during growth and probing electrodes after growth. This way, nanowire growth and device fabrication can be achieved simultaneously, providing a simple and rational way to realize nanowire-based integrated circuits.