Polymer-based organic field-effect transistor using offset printed source/drain structures -: art. no. 123508

Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4-ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of 3x10(-3) cm(2) V-1 s(-1) and on/off ratio of about 10(3) was achieved, making it possible to produce digital logic elements. (c) 2005 American Institute of Physics.