Journal
SCIENCE
Volume 309, Issue 5744, Pages 2191-2195Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1116865
Keywords
-
Categories
Ask authors/readers for more resources
We directly imaged electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices, which have. ferromagnetic source and drain tunnel-barrier contacts. The emission of spins from the source was observed, and a region of spin accumulation was imaged near the ferromagnetic drain contact. Both injected and accumulated spins have the same orientation (antiparallel to the contact magnetization), and we show that the accumulated spin polarization flows away from the drain (against the net electron current), indicating that electron spins are polarized by reflection from the ferromagnetic drain contact. The electrical conductance can be modulated by controlling the spin orientation of optically injected electrons flowing through the drain.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available