Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 351, Issue 37-39, Pages 3031-3036Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2005.07.011
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The diffusion properties of chalcogens (S, Se, Te) implanted into SiO2 were studied via secondary ion mass spectroscopy (SIMS) profiling between room temperature and the glass transition temperature (800-950 degrees C). Annealing of Te-containing samples leads directly to precipitation of metallic tellurium nanocrystals within the implantation profile. The S and Se concentration profiles were fitted by using a simple diffusion model in order to provide estimates of the diffusion constant and approximate solubility of these fast moving chemical species. A comparison of their differing diffusion behavior with complementary data on these systems suggests that (i) their oxidation states play a crucial role and (ii) the chalcogen propagation mechanism actually involves complex chemical interactions. (c) 2005 Elsevier B.V. All rights reserved.
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