Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 41, Issue 10, Pages 2682-2684Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2005.855293
Keywords
magnetic tunneling; p-n junction; stability; transistor
Ask authors/readers for more resources
A spin tunneling transistor (STT) was-designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at V-E = 1.25 +/- 0.25 V with the transfer ratio (I-C/I-E) of 2.88%, while the transistor is operated in the common collector circuitry. with an emitter bias and a base resistor at room temperature. The output current can be more than 4 mu A when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available